Choi, Minho Choi, Heechae Ahn, Jinho Kim, Yong Tae 2024-01-19T19:30:34Z 2024-01-19T19:30:34Z 2021-09-05 2019-09 1359-6462 https://pubs.kist.re.kr/handle/201004/119623 To overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD GENERALIZED GRADIENT APPROXIMATION DOPED GE2SB2TE5 ELECTRICAL-PROPERTIES FILMS Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion Article 10.1016/j.scriptamat.2019.05.024 1 SCRIPTA MATERIALIA, v.170, pp.16 - 19 SCRIPTA MATERIALIA 170 16 19 scie scopus 000475994700004 2-s2.0-85066266023 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article GENERALIZED GRADIENT APPROXIMATION DOPED GE2SB2TE5 ELECTRICAL-PROPERTIES FILMS Phase-change material Phase-change memory Doping Ge2Sb2Te5 Lattice distortion