Cho, Sangho Kim, Hongbum Sung, Myung Mo 2024-01-19T19:31:00Z 2024-01-19T19:31:00Z 2021-09-04 2019-09 1226-086X https://pubs.kist.re.kr/handle/201004/119647 Nickel sulfide (NiSx) was grown by atomic layer infiltration using bis(dimethylamino-2-methyl-2-butoxo)nickel(II) [Ni(dmamb)(2)] and hydrogen sulfide (H2S) as a metal precursor and a sulfur source. The steady-state growth rate of the film was 3.7 angstrom/cycles at 160-190 degrees C which was much faster compared to those by conventional atomic layer deposition method (<0.7 angstrom/cycles). This nickel sulfide thin films were characterized by taking X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, and hall measurements. The deposited films on Si wafer was single-phase polycrystalline with multiple domains. The NiSx film grown on fluorine-doped tin oxide (FPO)-coated glass was applied to a counter electrode in dye-sensitized solar cells, which performed a high catalytic activity for the reduction of I-3(-) to I- and the comparable cell efficiency of 7.12% with cells using conventional Pt-coated FPO counter electrode. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved. English 한국공업화학회 Rapid growth of NiSx by atomic layer infiltration and its application as an efficient counter electrode for dye-sensitized solar cells Article 10.1016/j.jiec.2019.05.013 1 Journal of Industrial and Engineering Chemistry, v.77, pp.470 - 476 Journal of Industrial and Engineering Chemistry 77 470 476 N scie scopus kci ART002510098 000473376600049 2-s2.0-85066078972 Chemistry, Multidisciplinary Engineering, Chemical Chemistry Engineering Article NICKEL SULFIDE FILMS LOW-COST DEPOSITION PERFORMANCE CARBON Atomic layer infiltration Nickel sulfide Counter electrode Dye-sensitized solar cell