Dong, B. Duan, J. Shang, C. Huang, H. Sawadogo, A. B. Jung, D. Wan, Y. Bowers, J. E. Grillot, F. 2024-01-19T19:31:22Z 2024-01-19T19:31:22Z 2021-09-02 2019-08-26 0003-6951 https://pubs.kist.re.kr/handle/201004/119668 This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures. Published under license by AIP Publishing. English AMER INST PHYSICS Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55-mu m InP-based InAs quantum dash lasers Article 10.1063/1.5110768 1 APPLIED PHYSICS LETTERS, v.115, no.9 APPLIED PHYSICS LETTERS 115 9 scie scopus 000483884100028 2-s2.0-85071684679 Physics, Applied Physics Article