Kim, Sanghyeon Kim, Seong Kwang Shin, Sanghoon Han, Jae-Hoon Geum, Dae-Myeong Shim, Jae-Phil Lee, Subin Kim, Hansung Ju, Gunwu Song, Jin Dong Alam, M. A. Kim, Hyung-Jun 2024-01-19T19:32:03Z 2024-01-19T19:32:03Z 2021-09-02 2019-08 2168-6734 https://pubs.kist.re.kr/handle/201004/119707 Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs Article 10.1109/JEDS.2019.2907957 1 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.869 - 877 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 1 869 877 scie scopus 000483017500009 2-s2.0-85074489818 Engineering, Electrical & Electronic Engineering Article InGaAs MOSFETs InGaAs-OI monolithic 3D self-heating Ni-InGaAs