Pak, Jinsu Lee, Ilmin Cho, Kyungjune Kim, Jae-Keun Jeong, Hyunhak Hwang, Wang-Taek Ahn, Geun Ho Kang, Keehoon Yu, Woo Jong Javey, Ali Chung, Seungjun Lee, Takhee 2024-01-19T19:32:32Z 2024-01-19T19:32:32Z 2021-09-02 2019-08 1936-0851 https://pubs.kist.re.kr/handle/201004/119733 In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried. However, the intrinsic optoelectronic characteristics because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated out to achieve further enhanced optoelectronic character of monolayer MoS2 have still not been explored until now photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2 including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors. English AMER CHEMICAL SOC LAYER PHOTODETECTOR GAIN Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure Article 10.1021/acsnano.9b04829 1 ACS NANO, v.13, no.8, pp.9638 - 9646 ACS NANO 13 8 9638 9646 scie scopus 000484077800115 2-s2.0-85070644317 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article LAYER PHOTODETECTOR GAIN MoS2 phototransistor heterostructure internal quantum efficiency internal responsivity