Hwang, Sunbin Jang, Sukjae Kang, Minji Bae, Sukang Lee, Seoung-Ki Hong, Jae-Min Lee, Sang Hyun Wang, Gunuk Fabiano, Simone Berggren, Magnus Kim, Tae-Wook 2024-01-19T19:33:12Z 2024-01-19T19:33:12Z 2021-09-02 2019-07-17 1944-8244 https://pubs.kist.re.kr/handle/201004/119769 Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future. English American Chemical Society FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS MEMORY SENSORS AZIDES LAYERS CELLS Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking Article 10.1021/acsami.9b07462 1 ACS Applied Materials & Interfaces, v.11, no.28, pp.25358 - 25368 ACS Applied Materials & Interfaces 11 28 25358 25368 scie scopus 000476684900056 2-s2.0-85070024790 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS MEMORY SENSORS AZIDES LAYERS CELLS organic ferroelectric memory organic field-effect transistor bis-FB-N-3 inverter switchable functions