Yuan, Yuan Jung, Daehwan Sun, Keye Zheng, Jiyuan Jones, Andrew H. Bowers, John E. Campbell, Joe C. 2024-01-19T19:33:15Z 2024-01-19T19:33:15Z 2021-09-02 2019-07-15 0146-9592 https://pubs.kist.re.kr/handle/201004/119772 We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k similar to 0.2 as InAlAs APDs on InP. (C) 2019 Optical Society of America English OPTICAL SOC AMER III-V on silicon avalanche photodiodes by heteroepitaxy Article 10.1364/OL.44.003538 1 OPTICS LETTERS, v.44, no.14, pp.3538 - 3541 OPTICS LETTERS 44 14 3538 3541 scie scopus 000475678500032 2-s2.0-85069615631 Optics Optics Article