Dathbun, Ajjiporn Kim, Seongchan Lee, Sungjoo Hwang, Do Kyung Cho, Jeong Ho 2024-01-19T20:00:50Z 2024-01-19T20:00:50Z 2021-09-02 2019-06 2058-9689 https://pubs.kist.re.kr/handle/201004/119897 In this study, flexible and transparent monolithic graphene transistors and complementary logic gates were fabricated using chemically doped graphene. The graphene channel was p- and n-doped with bis-(trifluoromethanesulfonyl)amine and poly(ethylene imine), respectively. Ion gel was utilized to gate the graphene transistor, and this facilitated low-voltage operation and yielded a coplanar-gate geometry. The resulting monolithic graphene transistors exhibited p-type or n-type transport depending on the type of dopant. The p-type and n-type graphene transistors were assembled together to fabricate various logic circuits, e.g., NOT, NAND, and NOR gates. Overall, the selective chemical doping of graphene enabled the realization of complementary logic gates, which represents a significant step in the application of graphene to future two-dimensional-based electronic devices. English ROYAL SOC CHEMISTRY Flexible and transparent graphene complementary logic gates Article 10.1039/c8me00100f 1 MOLECULAR SYSTEMS DESIGN & ENGINEERING, v.4, no.3, pp.484 - 490 MOLECULAR SYSTEMS DESIGN & ENGINEERING 4 3 484 490 N scie scopus 000484976400004 2-s2.0-85067103761 Chemistry, Physical Engineering, Chemical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Engineering Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS DOPED GRAPHENE LARGE-AREA FILMS LAYER DIELECTRICS DEPOSITION TRANSPORT