<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Buffolo,&#x20;Matteo</dcvalue>
<dcvalue element="contributor" qualifier="author">Samparisi,&#x20;Fabio</dcvalue>
<dcvalue element="contributor" qualifier="author">De&#x20;Santi,&#x20;Carlo</dcvalue>
<dcvalue element="contributor" qualifier="author">Jung,&#x20;Daehwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Norman,&#x20;Justin</dcvalue>
<dcvalue element="contributor" qualifier="author">Bowers,&#x20;John&#x20;E.</dcvalue>
<dcvalue element="contributor" qualifier="author">Herrick,&#x20;Robert&#x20;W.</dcvalue>
<dcvalue element="contributor" qualifier="author">Meneghesso,&#x20;Gaudenzio</dcvalue>
<dcvalue element="contributor" qualifier="author">Zanoni,&#x20;Enrico</dcvalue>
<dcvalue element="contributor" qualifier="author">Meneghini,&#x20;Matteo</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T20:01:11Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T20:01:11Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2019-06</dcvalue>
<dcvalue element="identifier" qualifier="issn">0018-9197</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;119914</dcvalue>
<dcvalue element="description" qualifier="abstract">We&#x20;present&#x20;an&#x20;extensive&#x20;analysis&#x20;of&#x20;the&#x20;physical&#x20;mechanisms&#x20;responsible&#x20;for&#x20;the&#x20;degradation&#x20;of&#x20;1.3-mu&#x20;m&#x20;InAs&#x20;quantum&#x20;dot&#x20;lasers&#x20;epitaxially&#x20;grown&#x20;on&#x20;Si,&#x20;for&#x20;application&#x20;in&#x20;silicon&#x20;photonics.&#x20;For&#x20;the&#x20;first&#x20;time,&#x20;we&#x20;characterize&#x20;the&#x20;degradation&#x20;of&#x20;the&#x20;devices&#x20;by&#x20;combined&#x20;electro-optical&#x20;measurements,&#x20;electroluminescence&#x20;spectra,&#x20;and&#x20;current-voltage&#x20;analysis.&#x20;We&#x20;demonstrate&#x20;the&#x20;following&#x20;original&#x20;results:&#x20;when&#x20;submitted&#x20;to&#x20;a&#x20;current&#x20;step-stress&#x20;experiment:&#x20;1)&#x20;QD&#x20;lasers&#x20;show&#x20;a&#x20;measurable&#x20;increase&#x20;in&#x20;threshold&#x20;current,&#x20;which&#x20;is&#x20;correlated&#x20;to&#x20;a&#x20;decrease&#x20;in&#x20;slope&#x20;efficiency;&#x20;2)&#x20;the&#x20;degradation&#x20;process&#x20;is&#x20;stronger,&#x20;when&#x20;devices&#x20;are&#x20;stressed&#x20;at&#x20;current&#x20;higher&#x20;than&#x20;200&#x20;mA,&#x20;i.e.,&#x20;in&#x20;the&#x20;stress&#x20;regime,&#x20;where&#x20;both&#x20;ground-state&#x20;and&#x20;excited-state&#x20;emission&#x20;are&#x20;present;&#x20;and&#x20;3)&#x20;in&#x20;the&#x20;same&#x20;range&#x20;of&#x20;stress&#x20;currents,&#x20;an&#x20;increase&#x20;in&#x20;the&#x20;defect-related&#x20;current&#x20;components&#x20;is&#x20;also&#x20;detected,&#x20;along&#x20;with&#x20;a&#x20;slight&#x20;decrease&#x20;in&#x20;the&#x20;series&#x20;resistance.&#x20;Based&#x20;on&#x20;the&#x20;experimental&#x20;evidence&#x20;collected&#x20;within&#x20;this&#x20;paper,&#x20;the&#x20;degradation&#x20;of&#x20;QD&#x20;lasers&#x20;is&#x20;ascribed&#x20;to&#x20;a&#x20;recombination-enhanced&#x20;defect&#x20;reaction&#x20;(REDR)&#x20;process,&#x20;activated&#x20;by&#x20;the&#x20;escape&#x20;of&#x20;electrons&#x20;out&#x20;of&#x20;the&#x20;quantum&#x20;dots.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">TEMPERATURE-DEPENDENCE</dcvalue>
<dcvalue element="subject" qualifier="none">THRESHOLD&#x20;CURRENT</dcvalue>
<dcvalue element="subject" qualifier="none">SI</dcvalue>
<dcvalue element="subject" qualifier="none">INJECTION</dcvalue>
<dcvalue element="title" qualifier="none">Physical&#x20;Origin&#x20;of&#x20;the&#x20;Optical&#x20;Degradation&#x20;of&#x20;InAs&#x20;Quantum&#x20;Dot&#x20;Lasers</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;JQE.2019.2909963</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;JOURNAL&#x20;OF&#x20;QUANTUM&#x20;ELECTRONICS,&#x20;v.55,&#x20;no.3</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;JOURNAL&#x20;OF&#x20;QUANTUM&#x20;ELECTRONICS</dcvalue>
<dcvalue element="citation" qualifier="volume">55</dcvalue>
<dcvalue element="citation" qualifier="number">3</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000466036300001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85064930611</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Quantum&#x20;Science&#x20;&amp;&#x20;Technology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Optics</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Optics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">TEMPERATURE-DEPENDENCE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">THRESHOLD&#x20;CURRENT</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SI</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">INJECTION</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Quantum&#x20;dots</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">lasers</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">degradation</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">semiconductor&#x20;defects</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">carrier&#x20;escape</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">reliability</dcvalue>
</dublin_core>
