Kang, Minji Lee, Sang-A Jang, Sukjae Hwang, Sunbin Lee, Seoung-Ki Bae, Sukang Hong, Jae-Min Lee, Sang Hyun Jeong, Kwang-Un Lim, Jung Ah Kim, Tae-Wook 2024-01-19T20:01:12Z 2024-01-19T20:01:12Z 2021-09-02 2019-06 1944-8244 https://pubs.kist.re.kr/handle/201004/119915 Wearable technology offers new ways to be more proactive about our health and surroundings in real time. For next-generation wearable systems, robust storage and recording media are required to monitor and process the essential electrical signals generated under various unpredictable strain conditions. Here, we report the first fibriform organic transistor memory integrated on a thin and flexible metal wire. A capillary tube coating system allows the formation of a thin and nanograined organic ferroelectric film on the wire. The uniform morphology imparts excellent switching stability (similar to 100 cycles), quasi-permanent retention (over 5 x 10(4) s), and low-voltage operation (below 5 V) to the fiber-shaped memory devices. When sewn in a stretchable textile fabric, the memory fiber achieves long retention time of more than 10(4) s with negligible degradation of memory window even under a constant diagonal strain of 100% that exhibits reliable data storage under tough environments. These results illustrate the possibility of the practical, wearable fiber memory for recording electronic signals in smart garment applications. English American Chemical Society Low-Voltage Organic Transistor Memory Fiber with a Nanograined Organic Ferroelectric Film Article 10.1021/acsami.9b03564 1 ACS Applied Materials & Interfaces, v.11, no.25, pp.22575 - 22582 ACS Applied Materials & Interfaces 11 25 22575 22582 N scie scopus 000473251100056 2-s2.0-85067911519 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS NONVOLATILE MEMORY TRANSPARENT organic memory fiber electronics organic field-effect transistor wearable electronics organic ferroelectrics