<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Kwang-Chon</dcvalue>
<dcvalue element="contributor" qualifier="author">Lim,&#x20;Sang-Soon</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Seung&#x20;Hwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Hong,&#x20;Junpyo</dcvalue>
<dcvalue element="contributor" qualifier="author">Cho,&#x20;Deok-Yong</dcvalue>
<dcvalue element="contributor" qualifier="author">Mohamed,&#x20;Ahmed&#x20;Yousef</dcvalue>
<dcvalue element="contributor" qualifier="author">Koo,&#x20;Chong&#x20;Min</dcvalue>
<dcvalue element="contributor" qualifier="author">Baek,&#x20;Seung-Hyub</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jin-Sang</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Seong&#x20;Keun</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T20:01:16Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T20:01:16Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2019-06</dcvalue>
<dcvalue element="identifier" qualifier="issn">1936-0851</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;119919</dcvalue>
<dcvalue element="description" qualifier="abstract">Grafting&#x20;nanotechnology&#x20;on&#x20;thermoelectric&#x20;materials&#x20;leads&#x20;to&#x20;significant&#x20;advances&#x20;in&#x20;their&#x20;performance.&#x20;Creation&#x20;of&#x20;structural&#x20;defects&#x20;including&#x20;nano-inclusion&#x20;and&#x20;interfaces&#x20;via&#x20;nanostructuring&#x20;achieves&#x20;higher&#x20;thermoelectric&#x20;efficiencies.&#x20;However,&#x20;it&#x20;is&#x20;still&#x20;challenging&#x20;to&#x20;optimize&#x20;the&#x20;nanostructure&#x20;via&#x20;conventional&#x20;fabrication&#x20;techniques.&#x20;The&#x20;thermal&#x20;instability&#x20;of&#x20;nanostructures&#x20;remains&#x20;an&#x20;issue&#x20;in&#x20;the&#x20;reproducibility&#x20;of&#x20;fabrication&#x20;processes&#x20;and&#x20;long-term&#x20;stability&#x20;during&#x20;operation.&#x20;This&#x20;work&#x20;presents&#x20;a&#x20;versatile&#x20;strategy&#x20;to&#x20;create&#x20;numerous&#x20;interfaces&#x20;in&#x20;a&#x20;thermoelectric&#x20;material&#x20;via&#x20;an&#x20;atomic-layer&#x20;deposition&#x20;(ALD)&#x20;technique.&#x20;An&#x20;extremely&#x20;thin&#x20;ZnO&#x20;layer&#x20;was&#x20;conformally&#x20;formed&#x20;via&#x20;ALD&#x20;over&#x20;the&#x20;Bi0.4Sb1.6Te3&#x20;powders,&#x20;and&#x20;numerous&#x20;heterogeneous&#x20;interfaces&#x20;were&#x20;generated&#x20;from&#x20;the&#x20;formation&#x20;of&#x20;Bi0.4Sb1.6Te3-ZnO&#x20;core-shell&#x20;structures&#x20;even&#x20;after&#x20;high-temperature&#x20;sintering.&#x20;The&#x20;incorporation&#x20;of&#x20;ALD-grown&#x20;ZnO&#x20;into&#x20;the&#x20;Bi0.4Sb1.6Te3&#x20;matrix&#x20;blocks&#x20;phonon&#x20;propagation&#x20;and&#x20;also&#x20;provides&#x20;tunability&#x20;in&#x20;electronic&#x20;carrier&#x20;density&#x20;via&#x20;impurity&#x20;doping&#x20;at&#x20;the&#x20;heterogeneous&#x20;grain&#x20;boundaries.&#x20;The&#x20;exquisite&#x20;control&#x20;in&#x20;the&#x20;ALD&#x20;cycles&#x20;provides&#x20;a&#x20;high&#x20;thermoelectric&#x20;performance&#x20;of&#x20;zT&#x20;=&#x20;1.50&#x20;+&#x2F;-&#x20;0.15&#x20;(at&#x20;329-360&#x20;K).&#x20;Specifically,&#x20;ALD&#x20;is&#x20;an&#x20;industry&#x20;compatible&#x20;technique&#x20;that&#x20;allows&#x20;uniform&#x20;and&#x20;conformal&#x20;coating&#x20;over&#x20;large&#x20;quantities&#x20;of&#x20;powders.&#x20;The&#x20;study&#x20;is&#x20;promising&#x20;in&#x20;terms&#x20;of&#x20;the&#x20;mass&#x20;production&#x20;of&#x20;nanostructured&#x20;thermoelectric&#x20;materials&#x20;with&#x20;considerable&#x20;improvements&#x20;in&#x20;performance&#x20;via&#x20;an&#x20;industry&#x20;compatible&#x20;and&#x20;reproducible&#x20;route.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">AMER&#x20;CHEMICAL&#x20;SOC</dcvalue>
<dcvalue element="subject" qualifier="none">BISMUTH-ANTIMONY&#x20;TELLURIDE</dcvalue>
<dcvalue element="subject" qualifier="none">ENHANCEMENT</dcvalue>
<dcvalue element="subject" qualifier="none">ZT</dcvalue>
<dcvalue element="title" qualifier="none">Precision&#x20;Interface&#x20;Engineering&#x20;of&#x20;an&#x20;Atomic&#x20;Layer&#x20;in&#x20;Bulk&#x20;Bi2Te3&#x20;Alloys&#x20;for&#x20;High&#x20;Thermoelectric&#x20;Performance</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1021&#x2F;acsnano.9b02574</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">ACS&#x20;NANO,&#x20;v.13,&#x20;no.6,&#x20;pp.7146&#x20;-&#x20;7154</dcvalue>
<dcvalue element="citation" qualifier="title">ACS&#x20;NANO</dcvalue>
<dcvalue element="citation" qualifier="volume">13</dcvalue>
<dcvalue element="citation" qualifier="number">6</dcvalue>
<dcvalue element="citation" qualifier="startPage">7146</dcvalue>
<dcvalue element="citation" qualifier="endPage">7154</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000473248300099</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85068526707</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Physical</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Chemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BISMUTH-ANTIMONY&#x20;TELLURIDE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ENHANCEMENT</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ZT</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">thermoelectric</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">bismuth&#x20;antimony&#x20;telluride</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">ZnO</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">atomic&#x20;layer&#x20;deposition</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">p-type</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">heterogeneous&#x20;interface</dcvalue>
</dublin_core>
