Lee, Seung Min Yum, Jung Hwan Larsen, Eric S. Shervin, Shahab Wang, Weijie Ryou, Jae-Hyun Bielawski, Christopher W. Lee, Woo Chul Kim, Seong Keun Oh, Jungwoo 2024-01-19T20:01:19Z 2024-01-19T20:01:19Z 2021-09-02 2019-06 0002-7820 https://pubs.kist.re.kr/handle/201004/119922 We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102}(BeO)||(002){102}(Sub) orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 m (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates. English WILEY THERMAL-CONDUCTIVITY GROWTH DEFECTS LAYER OXIDES SIZE Domain epitaxy of crystalline BeO films on GaN and ZnO substrates Article 10.1111/jace.16198 1 JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.102, no.6, pp.3745 - 3752 JOURNAL OF THE AMERICAN CERAMIC SOCIETY 102 6 3745 3752 scie scopus 000465347700069 2-s2.0-85058158959 Materials Science, Ceramics Materials Science Article THERMAL-CONDUCTIVITY GROWTH DEFECTS LAYER OXIDES SIZE atomic-layer deposition beryllium oxide critical thickness domain-matching epitaxy gallium nitride zinc oxide