Kwak, Joon Young 2024-01-19T20:02:04Z 2024-01-19T20:02:04Z 2021-09-02 2019-06 2211-3797 https://pubs.kist.re.kr/handle/201004/119960 A simple, non-destructive, and convenient method using Raman spectroscopy and Atomic Force Microscopy for extracting the absorption coefficient of MoS2 is presented. The attenuation of the substrate Raman signal intensity due to the MoS2 overlayer is found to be dependent on the MoS2 film thickness estimated from the AFM measurements. Using the light attenuation model from the measurements, the experimentally extracted absorption coefficient of the thin MoS2 flakes is determined to be 2.8x10(6) cm(-1). This simple technique is capable of estimating the absorption coefficient of other two-dimensional layered materials. English Elsevier BV Absorption coefficient estimation of thin MoS2 film using attenuation of silicon substrate Raman signal Article 10.1016/j.rinp.2019.102202 1 Results in Physics, v.13 Results in Physics 13 Y scie scopus 000476618700091 2-s2.0-85063646276 Materials Science, Multidisciplinary Physics, Multidisciplinary Materials Science Physics Article FIELD-EFFECT TRANSISTORS GRAPHENE THICKNESS MoS2 Absorption coefficient Substrate Raman Attenuation