Dathbun, Ajjiporn Kim, Youngchan Choi, Yongsuk Sun, Jia Kim, Seongchan Kang, Byunggil Kang, Moon Sung Hwang, Do Kyung Lee, Sungjoo Lee, Changgu Cho, Jeong Ho 2024-01-19T20:02:26Z 2024-01-19T20:02:26Z 2021-09-02 2019-05 1944-8244 https://pubs.kist.re.kr/handle/201004/119981 We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on–off ratio of 105, and a turn-on voltage of −0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium–gallium–zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics. English American Chemical Society Selectively Metallized 2D Materials for Simple Logic Devices Article 10.1021/acsami.9b03078 1 ACS Applied Materials & Interfaces, v.11, no.20, pp.18571 - 18579 ACS Applied Materials & Interfaces 11 20 18571 18579 N scie scopus 000469288300054 2-s2.0-85066117233 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS THIN-FILM TRANSISTORS MOS2 ATOMIC LAYERS BLACK PHOSPHORUS BILAYER MOS2 TRANSITION TRANSPORT CONTACTS GROWTH MoS2 transistor monolithic doping flexible