Kim, Sung Jong Park, Youn Ho Jang, Chaun Hruban, Andrzej Koo, Hyun Cheol 2024-01-19T20:04:19Z 2024-01-19T20:04:19Z 2021-09-02 2019-04-30 0040-6090 https://pubs.kist.re.kr/handle/201004/120081 A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni81Fe19/SiO2/Ca-doped Bi2Se3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni81Fe19/SiO2/Ca-doped Bi2Se3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices. English ELSEVIER SCIENCE SA 3-DIMENSIONAL TOPOLOGICAL INSULATOR SINGLE DIRAC CONE BI2SE3 Anisotropic magnetoresistance in a Ni81Fe19/SiO2/Ca-Bi2Se3 hybrid structure Article 10.1016/j.tsf.2019.03.004 1 THIN SOLID FILMS, v.676, pp.87 - 91 THIN SOLID FILMS 676 87 91 scie scopus 000462039400011 2-s2.0-85062677843 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article 3-DIMENSIONAL TOPOLOGICAL INSULATOR SINGLE DIRAC CONE BI2SE3 Topological insulator Anisotropic magnetoresistance Spin-momentum locking Magnetic anisotropy Magnetic switching