Baek, In-Hwan Pyeon, Jung Joon Han, Seong Ho Lee, Ga-Yeon Choi, Byung Joon Han, Jeong Hwan Chung, Taek-Mo Hwang, Cheol Seong Kim, Seong Keun 2024-01-19T20:04:24Z 2024-01-19T20:04:24Z 2021-09-02 2019-04-24 1944-8244 https://pubs.kist.re.kr/handle/201004/120086 A new deposition technique is required to grow the active oxide semiconductor layer for emerging oxide electronics beyond the conventional sputtering technique. Atomic layer deposition (ALD) has the benefits of versatile composition control, low defect density in films, and conformal growth over a complex structure, which can hardly be obtained with sputtering. This study demonstrates the feasibility of growing amorphous In-Zn-Sn-O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications. In the ALD of the a-IZTO film, the growth behavior indicates that there exists a growth correlation between the precursor molecules and the film surface where the ALD reaction occurs. This provides a detailed understanding of the ALD process that is required for precise composition control. The a-IZTO film with In/Zn/Sn = 10:70:20 was chosen for high-performance TFTs, among other compositions, regarding the field-effect mobility (mu(FE)), turn-on voltage (V-on), and subthreshold swing (SS) voltage. The optimized TFT device with the a-IZTO film thickness of 8 nm revealed a high performance with a mu(FE) of 22 cm(2) V-1 s(-1), Von of 0.8 V-on and SS of 0.15 V dec(-1) after annealing at 400 degrees C for 30 min. Furthermore, an emerging device such as a vertical channel TFT was demonstrated. Thus, the a-IZTO ALD process could offer promising opportunities for a variety of emerging oxide electronics beyond planar TFTs. English American Chemical Society TEMPERATURE High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition Article 10.1021/acsami.9b03331 1 ACS Applied Materials & Interfaces, v.11, no.16, pp.14892 - 14901 ACS Applied Materials & Interfaces 11 16 14892 14901 scie scopus 000466052800041 2-s2.0-85065028744 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article TEMPERATURE atomic layer deposition amorphous oxide In-Zn-Sn-O thin film transistor vertical transistor