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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Gyo&#x20;Sub</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Gun-Hwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Kwak,&#x20;Kisung</dcvalue>
<dcvalue element="contributor" qualifier="author">Jeong,&#x20;Doo&#x20;Seok</dcvalue>
<dcvalue element="contributor" qualifier="author">Ju,&#x20;Hyunsu</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T20:31:11Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T20:31:11Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2019-04</dcvalue>
<dcvalue element="identifier" qualifier="issn">0018-9383</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;120166</dcvalue>
<dcvalue element="description" qualifier="abstract">The&#x20;physical&#x20;unclonable&#x20;function&#x20;(PUF)&#x20;based&#x20;on&#x20;resistive&#x20;random-access&#x20;memory&#x20;(RRAM)&#x20;possesses&#x20;a&#x20;distinctive&#x20;advantage&#x20;that&#x20;can&#x20;offer&#x20;higher&#x20;security&#x20;and&#x20;lower&#x20;cost&#x20;than&#x20;the&#x20;traditional&#x20;complementary&#x20;metal-oxide-semiconductor-based&#x20;Wcryptographic&#x20;devices&#x20;and&#x20;other&#x20;conventional&#x20;PUFs.&#x20;The&#x20;intrinsic&#x20;stochasticity&#x20;of&#x20;RRAM&#x20;devices&#x20;successfully&#x20;provides&#x20;attractive&#x20;properties&#x20;to&#x20;implement&#x20;PUF.&#x20;In&#x20;this&#x20;paper,&#x20;we&#x20;present&#x20;a&#x20;novel&#x20;multistate-based&#x20;RRAM&#x20;PUF&#x20;to&#x20;realize&#x20;strong&#x20;tolerance&#x20;against&#x20;attack.&#x20;By&#x20;applying&#x20;multilevel&#x20;states&#x20;with&#x20;bit&#x20;shuffling&#x20;to&#x20;the&#x20;RRAM&#x20;PUF,&#x20;the&#x20;randomness&#x20;and&#x20;uniqueness&#x20;were&#x20;enhanced&#x20;close&#x20;to&#x20;ideal&#x20;values.&#x20;In&#x20;addition,&#x20;the&#x20;bit&#x20;error&#x20;rate&#x20;was&#x20;dramatically&#x20;reduced&#x20;using&#x20;the&#x20;temperature&#x20;compensation&#x20;mechanism.&#x20;Moreover,&#x20;our&#x20;new&#x20;method&#x20;not&#x20;only&#x20;enables&#x20;the&#x20;generation&#x20;of&#x20;larger&#x20;challenge-response&#x20;pairs&#x20;(CRPs)&#x20;with&#x20;less&#x20;footprint&#x20;but&#x20;also&#x20;can&#x20;reconfigure&#x20;CRPs.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">MEMORY</dcvalue>
<dcvalue element="title" qualifier="none">Enhanced&#x20;Reconfigurable&#x20;Physical&#x20;Unclonable&#x20;Function&#x20;Based&#x20;on&#x20;Stochastic&#x20;Nature&#x20;of&#x20;Multilevel&#x20;Cell&#x20;RRAM</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;TED.2019.2898455</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;ELECTRON&#x20;DEVICES,&#x20;v.66,&#x20;no.4,&#x20;pp.1717&#x20;-&#x20;1721</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;TRANSACTIONS&#x20;ON&#x20;ELECTRON&#x20;DEVICES</dcvalue>
<dcvalue element="citation" qualifier="volume">66</dcvalue>
<dcvalue element="citation" qualifier="number">4</dcvalue>
<dcvalue element="citation" qualifier="startPage">1717</dcvalue>
<dcvalue element="citation" qualifier="endPage">1721</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000461838600015</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85063257309</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MEMORY</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Hardware&#x20;security</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">multilevel&#x20;cell&#x20;(MLC)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">physical&#x20;unclonable&#x20;function&#x20;(PUF)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">randomness</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">reliability</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">resistive&#x20;random-access&#x20;memory&#x20;(RRAM)</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">uniqueness</dcvalue>
</dublin_core>
