Duan, Jianan Huang, Heming Dong, Bozhang Jung, Daehwan Norman, Justin C. Bowers, John E. Grillot, Frederic 2024-01-19T20:32:28Z 2024-01-19T20:32:28Z 2021-09-02 2019-03-01 1041-1135 https://pubs.kist.re.kr/handle/201004/120239 This letter reports on a 1.3-mu m reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with -7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC OPTICAL FEEDBACK DYNAMICS SENSITIVITY 1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon Article 10.1109/LPT.2019.2895049 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.31, no.5, pp.345 - 348 IEEE PHOTONICS TECHNOLOGY LETTERS 31 5 345 348 scie scopus 000458815000004 2-s2.0-85061755780 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article OPTICAL FEEDBACK DYNAMICS SENSITIVITY Semiconductor lasers quantum dots photonics integrated circuits optical feedback