Yoon, Sang Hyun Gwak, Dham Kim, Hong Hee Woo, Hwi Je Cho, Jinhee Choi, Jin Woo Choi, Won Kook Song, Young Jae Lee, Chang-Lyoul Park, Jongnam Heo, Kwang Choi, Young Jin 2024-01-19T20:32:42Z 2024-01-19T20:32:42Z 2022-01-25 2019-03 2330-4022 https://pubs.kist.re.kr/handle/201004/120251 Quantum dot light-emitting diodes (QLEDs) are expected to be the basis of next-generation displays and have consequently been extensively investigated with the aim of commercialization. Herein, QLED brightness, efficiency, and lifetime are significantly improved by insertion of an Al2O3 barrier layer via atomic layer deposition (ALD), which effectively suppresses the etching reaction with poly(3,4-ethylenedioxythiophene):polystyrenesulfonate and prevents metal ion diffusion from indium tin oxide (ITO) into the emission layer, thereby effectively reducing the effect of exciton quenching. The above-mentioned suppression of exciton quenching is verified using time-resolved photoluminescence spectroscopy/energy-dispersive X-ray spectroscopy, and a device prepared using four ALD cycles is shown to exhibit increased maximal luminance (39 410 cd/m(2); two times the value achieved without the Al2O3 layer), current efficiency (47.89 cd/A; eight times the value achieved without the Al2O3 layer), and external quantum efficiency (12.89%). In addition, all Al2O3-containing QLEDs feature longer lifetimes than the QLED without Al2O3. English AMER CHEMICAL SOC Insertion of an Inorganic Barrier Layer as a Method of Improving the Performance of Quantum Dot Light-Emitting Diodes Article 10.1021/acsphotonics.8b01672 1 ACS PHOTONICS, v.6, no.3, pp.743 - 748 ACS PHOTONICS 6 3 743 748 N scie scopus 000462260100022 2-s2.0-85063201466 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Optics Physics, Applied Physics, Condensed Matter Science & Technology - Other Topics Materials Science Optics Physics Article HIGHLY EFFICIENT AL2O3 INTERFACE DEVICES QLED metal ion diffusion Al2O3 performance optimization atomic layer deposition barrier layer