Jin, Hyun Soo Kim, Dae Hyun Kim, Seong Keun Wallace, Robert M. Kim, Jiyoung Park, Tae Joo 2024-01-19T20:33:11Z 2024-01-19T20:33:11Z 2021-09-02 2019-03 2199-160X https://pubs.kist.re.kr/handle/201004/120278 The influence of two oxygen source types, H2O and O-3, on residual C-related impurities in atomic-layer-deposited (ALD) Al2O3 film is systematically examined. ALD Al2O3 film grown using H2O contains negligible C-related impurities irrespective of growth temperature. However, the C-related impurity in film grown using O-3 exhibits strong dependence on growth temperature; only Al carbonate (Al-CO3) is present in film grown at 300 degrees C, but C-related impurities with lower oxidation states, such as Al-COOH and Al-CHO, appear as the temperature decreases to 150 degrees C. This suggests that the reactivity of O-3 and H2O in the ALD process has a different temperature dependence; from a residual impurity perspective, compared to O-3, H2O is a beneficial oxygen source for low temperature processes. Electrical properties, such as charge trapping and gate leakage current, are also examined. For a growth temperature of 300 degrees C, the film grown using O-3 is slightly superior to the film grown using H2O due to its high film density. However, the film grown using H2O demonstrates better electrical characteristics at low growth temperature, 150 degrees C. English WILEY RAY PHOTOELECTRON-SPECTROSCOPY K GATE DIELECTRICS IN-SITU XPS CHARACTERIZATION SURFACE PASSIVATION BINDING-ENERGY PLASMA ALD O-3 ULTRATHIN Strategic Selection of the Oxygen Source for Low Temperature-Atomic Layer Deposition of Al2O3 Thin Film Article 10.1002/aelm.201800680 1 ADVANCED ELECTRONIC MATERIALS, v.5, no.3 ADVANCED ELECTRONIC MATERIALS 5 3 scie scopus 000461544600009 2-s2.0-85058842973 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article RAY PHOTOELECTRON-SPECTROSCOPY K GATE DIELECTRICS IN-SITU XPS CHARACTERIZATION SURFACE PASSIVATION BINDING-ENERGY PLASMA ALD O-3 ULTRATHIN atomic layer deposition low temperature process oxygen source ozone water