Kim, Tae Jung Park, Han Gyeol Byun, Jun Seok Van Long Le Hoang Tung Nguyen Xuan Au Nguyen Kim, Young Dong Song, Jin Dong Aspnes, David E. 2024-01-19T20:33:23Z 2024-01-19T20:33:23Z 2021-09-02 2019-03 0374-4884 https://pubs.kist.re.kr/handle/201004/120288 We report the pseudodielectric functions and the critical points of GaAsxSb1-x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-mu m-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E-1, E-1+Delta(1), E'(0), E'(0)+Delta'(0), E-2, E'(2), and E'(1) critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting. English KOREAN PHYSICAL SOC ELECTRONIC-STRUCTURE OPTICAL-PROPERTIES PARAMETERS ELEMENTS Dielectric Functions and Critical Points of GaAsSb Alloys Article 10.3938/jkps.74.595 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.6, pp.595 - 599 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 74 6 595 599 scie scopus kci ART002448359 000462143300011 2-s2.0-85063545509 Physics, Multidisciplinary Physics Article ELECTRONIC-STRUCTURE OPTICAL-PROPERTIES PARAMETERS ELEMENTS GaAsSb Ellipsometry Dielectric function Critical point