Park, So Jeong Jeon, Dae-Young Kim, Gyu-Tae 2024-01-19T20:34:25Z 2024-01-19T20:34:25Z 2021-09-02 2019-02-15 0167-9317 https://pubs.kist.re.kr/handle/201004/120346 The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration. English ELSEVIER SCIENCE BV ELECTRICAL CHARACTERISTICS CROSS-SECTION GATE Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors Article 10.1016/j.mee.2019.01.003 1 MICROELECTRONIC ENGINEERING, v.207, pp.50 - 54 MICROELECTRONIC ENGINEERING 207 50 54 scie scopus 000460851300008 2-s2.0-85061209821 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article ELECTRICAL CHARACTERISTICS CROSS-SECTION GATE Fin cross-section shape Junctionless transistor 2D numerical simulation Channel doping concentration