Kang, Hojin Hong, Sung Ju Park, Min Jang, Hyun-Seok Nam, Kiin Choi, Soobong Kim, Byung Hoon Park, Yung Woo 2024-01-19T21:00:30Z 2024-01-19T21:00:30Z 2022-01-25 2019-02 0957-4484 https://pubs.kist.re.kr/handle/201004/120379 We report on an electronic structure change of single-walled carbon nanotube (SWNT) on hexagonal boron nitride due to electron doping via high-pressure H-2 exposure. The fractional coverage of hydrogenated carbon atom is estimated to be at least theta = 0.163 from the in situ I-ds-V-g measurements of the release process. Raman spectroscopy and x-ray photoelectron spectroscopy were carried out to support the in situ electrical measurements. In particular, we used the dissociative Langmuir-type model to yield the desorption coefficient k(des) by fitting it to the in situ electrical data. Finally, we applied this hydrogenation method to the SWNT network on the commercial Si/SiO2 substrate to open the possibility of the scalable n-type semiconducting SWNT FETs. English IOP PUBLISHING LTD Tuning the electronic structure of single-walled carbon nanotube by high-pressure H-2 exposure Article 10.1088/1361-6528/aaf12b 1 NANOTECHNOLOGY, v.30, no.6 NANOTECHNOLOGY 30 6 N scie scopus 000452723700001 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article BASAL-PLANE HYDROGEN GRAPHENE ADSORPTION PERFORMANCE TRANSISTORS CONDUCTION single-walled carbon nanotubes hexagonal boron nitride hydrogenation high-pressure H-2 n-type doping in situ electrical measurements