Lee, Woongkyu Cho, Cheol Jin Lee, Woo Chul Hwang, Cheol Seong Chang, Robert P. H. Kim, Seong Keun 2024-01-19T21:03:51Z 2024-01-19T21:03:51Z 2021-09-05 2018-12-28 2050-7526 https://pubs.kist.re.kr/handle/201004/120561 Metallic MoO2 is proposed as a new oxide electrode for dynamic random-access memory (DRAM) capacitors. Although noble metal oxide electrodes including RuO2 and SrRuO3 have attracted interest as capacitor electrodes, these materials have critical instability problems of ease-of-reduction during the subsequent annealing process. In contrast, MoO2 shows excellent thermal stability of the structural and chemical properties even after annealing at 400 degrees C in both forming gas and O-2 atmospheres. In addition, MoO2 electrodes induce the formation of a high temperature phase with a high dielectric constant, rutile TiO2, by atomic layer deposition at the relatively low temperature of 250 degrees C because of the structural homogeneity between MoO2 and rutile TiO2. These results demonstrate that MoO2 could be a promising electrode material for DRAM capacitors. English ROYAL SOC CHEMISTRY ATOMIC LAYER DEPOSITION DOPED TIO2 FILMS WORK FUNCTION SRTIO3 FILMS THIN-FILMS TITANIUM MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors Article 10.1039/c8tc04167a 1 JOURNAL OF MATERIALS CHEMISTRY C, v.6, no.48, pp.13250 - 13256 JOURNAL OF MATERIALS CHEMISTRY C 6 48 13250 13256 scie scopus 000453251200016 2-s2.0-85058570666 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ATOMIC LAYER DEPOSITION DOPED TIO2 FILMS WORK FUNCTION SRTIO3 FILMS THIN-FILMS TITANIUM MoO2 DRAM capacitor oxide electrode