Lee, Young Tack Kang, Ji-Hoon Kwak, Kisung Ahn, Jongtae Choi, Hyun Tae Ju, Byeong-Kwon Shokouh, Seyed Hossein Im, Seongil Park, Min-Chul Hwang, Do Kyung 2024-01-19T21:05:11Z 2024-01-19T21:05:11Z 2021-09-04 2018-12 2330-4022 https://pubs.kist.re.kr/handle/201004/120632 Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS2 phototransistor that exhibits a photoresponse in the 400–700 nm range with the maximum responsivity of over 1 × 104 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors. English AMER CHEMICAL SOC High-Performance 2D MoS2 Phototransistor for Photo Logic Gate and Image Sensor Article 10.1021/acsphotonics.8b01049 1 ACS PHOTONICS, v.5, no.12, pp.4745 - 4750 ACS PHOTONICS 5 12 4745 4750 N scie scopus 000454463000004 2-s2.0-85058803802 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Optics Physics, Applied Physics, Condensed Matter Science & Technology - Other Topics Materials Science Optics Physics Article TRANSITION-METAL-DICHALCOGENIDE OPTOELECTRONICS TRANSPARENT GRAPHENE two-dimensional van der Waals materials MoS2 graphene contact phototransistor photoinverter image sensor