Choi, Won Young Kim, Hyung-jun Chang, Joonyeon Han, Suk Hee Abbout, Adel Saidaoui, Hamed Ben Mohamed Manchon, Aurelien Lee, Kyung-Jin Koo, Hyun Cheol 2024-01-19T21:30:18Z 2024-01-19T21:30:18Z 2021-09-04 2018-12 1530-6984 https://pubs.kist.re.kr/handle/201004/120648 The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality. English AMER CHEMICAL SOC ORBIT INTERACTION GATE CONTROL PRECESSION INVERSION CHARGE TORQUE Ferromagnet-Free All-Electric Spin Hall Transistors Article 10.1021/acs.nanolett.8b03998 1 NANO LETTERS, v.18, no.12, pp.7998 - 8002 NANO LETTERS 18 12 7998 8002 scie scopus 000453488800078 2-s2.0-85058343681 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article ORBIT INTERACTION GATE CONTROL PRECESSION INVERSION CHARGE TORQUE Spin transistor spin logic device spin Hall effect Rashba effect spin precession