Pyeon, Jung Joon Cho, Cheol Jin Jeong, Doo Seok Kim, Jin-Sang Kang, Chong-Yun Kim, Seong Keun 2024-01-19T21:31:02Z 2024-01-19T21:31:02Z 2021-09-05 2018-11-09 0957-4484 https://pubs.kist.re.kr/handle/201004/120688 Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO(2)films were inductively formed only on the Ru-Pt layer containing <= 43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (similar to 40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of similar to 0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors. English IOP PUBLISHING LTD ATOMIC-LAYER DEPOSITION HIGH DIELECTRIC-CONSTANT DOPED TIO2 FILMS THIN-FILMS TITANIUM-DIOXIDE GROWTH-BEHAVIOR A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors Article 10.1088/1361-6528/aaddbc 1 NANOTECHNOLOGY, v.29, no.45 NANOTECHNOLOGY 29 45 scie scopus 000444750800001 2-s2.0-85053379944 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article ATOMIC-LAYER DEPOSITION HIGH DIELECTRIC-CONSTANT DOPED TIO2 FILMS THIN-FILMS TITANIUM-DIOXIDE GROWTH-BEHAVIOR DRAM capacitor Ru-Pt electrode rutile TiO2