Han, Sangmoon Lee, Seoung-Ki Choi, Ilgyu Song, Jihoon Lee, Cheul-Ro Kim, Kangmin Ryu, Mee-Yi Jeong, Kwang-Un Kim, Jin Soo 2024-01-19T21:31:11Z 2024-01-19T21:31:11Z 2021-09-04 2018-11-07 1944-8244 https://pubs.kist.re.kr/handle/201004/120696 In this study, we report highly efficient and flexible photosensors with GaN nanowires (NWs) horizontally embedded in a graphene sandwich structure fabricated on polyethylene terephthalate. GaN NWs and the graphene sandwich structure are used as light-absorbing media and the channel for carrier movement, respectively. To form uniform high-quality crystalline GaN NWs on Si(111) substrates, the initial nucleation behavior of the NWs was manipulated by applying the new growth technique of Ga predeposition. High-resolution transmission electron microscopic images obtained along the vertical direction of GaN NWs showed that stacking faults, typically observed in Si-based (In,Ga)As NWs, were rare. Consequently, narrow and strong optical emission was observed from the GaN NWs at wavelengths of 365.12 nm at 300 K. The photocurrent and photoresponsivity of the flexible photosensor with 802 nm long GaN NWs horizontally embedded in the graphene sandwich channel were measured as 9.17 mA and 91.70 A/W, respectively, at the light intensity of 100 mW/cm(2), which are much higher than those previously reported. The high optical-to-electrical conversion characteristics of our flexible photosensors are attributed to the increase in the effective interface between the light-absorbing media and the carrier channel by the horizontal distribution of the GaN NWs within the graphene sandwich structure. After 200 cyclic-bending test of the GaN NW photosensor at the strain of 3%, the photoresponsivity under strain was measured as 89.04 A/W at 100 mW/cm(2), corresponding to 97.1% of the photoresponsivity obtained before bending. The photosensor proposed in this study is relatively simple in device design and fabrication, and it requires no sophisticated nanostructural design to minimize the resistance to metal contacts. English American Chemical Society YELLOW LUMINESCENCE SILICON NANOWIRES EPITAXIAL-GROWTH BROAD-BAND MECHANISM PHOTOLUMINESCENCE PHOTODETECTOR METAL SAPPHIRE EXCITONS Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel Article 10.1021/acsami.8b11229 1 ACS Applied Materials & Interfaces, v.10, no.44, pp.38173 - 38182 ACS Applied Materials & Interfaces 10 44 38173 38182 scie scopus 000449887600046 2-s2.0-85056109231 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article YELLOW LUMINESCENCE SILICON NANOWIRES EPITAXIAL-GROWTH BROAD-BAND MECHANISM PHOTOLUMINESCENCE PHOTODETECTOR METAL SAPPHIRE EXCITONS GaN nanowires graphene channel flexible photosensor Si substrate polyethylene terephthalate