Lee, Joo Song Choi, Soo Ho Yun, Seok Joon Kim, Yong In Boandoh, Stephen Park, Ji-Hoon Shin, Bong Gyu Ko, Hayoung Lee, Seung Hee Kim, Young-Min Lee, Young Hee Kim, Ki Kang Kim, Soo Min 2024-01-19T21:32:07Z 2024-01-19T21:32:07Z 2021-09-05 2018-11 0036-8075 https://pubs.kist.re.kr/handle/201004/120748 Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide. English American Association for the Advancement of Science Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation Article 10.1126/science.aau2132 1 Science, v.362, no.6416, pp.817 - + Science 362 6416 817 + N scie scopus 000450488500050 2-s2.0-85056564206 Multidisciplinary Sciences Science & Technology - Other Topics Article MONOLAYER GRAPHENE GROWTH PRESSURE BN hexagonal boron nitride graphene single-crystal two dimensional materials