Lee, Sangyeob Lee, Jun Su Jang, Jiseong Hong, Ki-Ha Lee, Doh-Kwon Song, Soomin Kim, Kihwan Eo, Young-Joo Yun, Jae Ho Gwak, Jihye Chung, Choong-Heui 2024-01-19T21:32:18Z 2024-01-19T21:32:18Z 2021-09-04 2018-11 2211-2855 https://pubs.kist.re.kr/handle/201004/120757 We demonstrate the ability to fabricate high-quality nanoscale electrical contact between silver nanowires (AgNWs) and underlying semiconducting layers in chalcogenide thin film solar cells. AgNW electrodes have attracted many interests due to their ability for low temperature solution processing. However, they have a drawback that the interfacial defects can be generated between AgNWs and underlying rugged semiconductor layers making it difficult to form high-quality junction. To enhance the junction properties, conducting matrix layers have been adapted. Yet, the issues regarding the AgNW/semiconductor junction have not been fully resolved. We developed a facile method to form robust nanoscale contact between AgNWs and semiconducting thin films to achieve high performance chalcogenide thin film solar cells. The method is to deposit an ultra-thin semiconductor layer on devices using aqueous chemical bath deposition. The chemical bath deposition has capability to effectively fill even nanoscale gap and to form chemically stable bonds as well as an intimate junction. As a proof of concept, a CdS layer (similar to 10 nm) was deposited using the chemical bath deposition on Cu (In,Ga)Se-2 (CIGS) solar cells with a structure of AgNW/CdS/CIGS/Mo/Glass. We also identified that the key factor governing the current-voltage characteristic is the electrical contact between the AgNW electrode and the CdS buffer layer in CIGS thin film solar cells. The power conversion efficiency of the CIGS cell was dramatically improved from 4.9% to 14.2% owing to high-quality AgNW-CdS electrical contact produced by chemical bath deposition of the additional CdS layer as thin as 10 nm. English ELSEVIER COMPOSITE WINDOW LAYERS TRANSPARENT ELECTRODES AG NANOWIRE NEXT-GENERATION METAL-OXIDE DEPOSITION ITO NETWORKS NANOPARTICLES CONDUCTIVITY Robust nanoscale contact of silver nanowire electrodes to semiconductors to achieve high performance chalcogenide thin film solar cells Article 10.1016/j.nanoen.2018.09.027 1 NANO ENERGY, v.53, pp.675 - 682 NANO ENERGY 53 675 682 scie scopus 000448994600076 2-s2.0-85053512282 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article COMPOSITE WINDOW LAYERS TRANSPARENT ELECTRODES AG NANOWIRE NEXT-GENERATION METAL-OXIDE DEPOSITION ITO NETWORKS NANOPARTICLES CONDUCTIVITY Transparent conducting electrodes Silver nanowires Chalcogenide thin film solar cells Nanoscale metal-semiconductor contact Metal-semiconductor coreshell nanowire