Song, Kyung Mee Kim, Dong-Ok Kim, Jae-Sung Lee, Dong Ryeol Choi, Jun Woo 2024-01-19T21:32:18Z 2024-01-19T21:32:18Z 2021-09-04 2018-11 1567-1739 https://pubs.kist.re.kr/handle/201004/120758 The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and - 8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface. English ELSEVIER SCIENCE BV ATOMIC LAYERS X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces Article 10.1016/j.cap.2018.05.003 1 CURRENT APPLIED PHYSICS, v.18, no.11, pp.1212 - 1217 CURRENT APPLIED PHYSICS 18 11 1212 1217 scie scopus kci ART002406091 000446676900009 2-s2.0-85046833581 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ATOMIC LAYERS Spintronics Magnetic anisotropy X-ray scattering Electric field control of magnetism