<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Pyeon,&#x20;Jung&#x20;Joon</dcvalue>
<dcvalue element="contributor" qualifier="author">Baek,&#x20;In-Hwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Lim,&#x20;Weon&#x20;Cheol</dcvalue>
<dcvalue element="contributor" qualifier="author">Chae,&#x20;Keun&#x20;Hwa</dcvalue>
<dcvalue element="contributor" qualifier="author">Han,&#x20;Seong&#x20;Ho</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Ga&#x20;Yeon</dcvalue>
<dcvalue element="contributor" qualifier="author">Baek,&#x20;Seung-Hyub</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jin-Sang</dcvalue>
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Ji-Won</dcvalue>
<dcvalue element="contributor" qualifier="author">Chung,&#x20;Taek-Mo</dcvalue>
<dcvalue element="contributor" qualifier="author">Han,&#x20;Jeong&#x20;Hwan</dcvalue>
<dcvalue element="contributor" qualifier="author">Kang,&#x20;Chong-Yun</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Seong&#x20;Keun</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T21:33:04Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T21:33:04Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-05</dcvalue>
<dcvalue element="date" qualifier="issued">2018-10-07</dcvalue>
<dcvalue element="identifier" qualifier="issn">2040-3364</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;120798</dcvalue>
<dcvalue element="description" qualifier="abstract">Research&#x20;on&#x20;two-dimensional&#x20;(2D)&#x20;metal&#x20;dichalcogenides&#x20;is&#x20;rapidly&#x20;expanding&#x20;owing&#x20;to&#x20;their&#x20;unique&#x20;characteristics&#x20;that&#x20;do&#x20;not&#x20;exist&#x20;in&#x20;bulk&#x20;materials.&#x20;The&#x20;industrially&#x20;compatible&#x20;development&#x20;of&#x20;these&#x20;emerging&#x20;materials&#x20;is&#x20;indispensable&#x20;to&#x20;facilitate&#x20;the&#x20;transition&#x20;of&#x20;2D&#x20;metal&#x20;dichalcogenides&#x20;from&#x20;the&#x20;research&#x20;stage&#x20;to&#x20;the&#x20;practical&#x20;industrial&#x20;application&#x20;stage.&#x20;However,&#x20;an&#x20;industrially&#x20;relevant&#x20;method,&#x20;i.e.,&#x20;the&#x20;low-temperature&#x20;synthesis&#x20;of&#x20;wafer-scale,&#x20;continuous,&#x20;and&#x20;orientation-controlled&#x20;2D&#x20;metal&#x20;dichalcogenides,&#x20;still&#x20;remains&#x20;a&#x20;significant&#x20;challenge.&#x20;Here,&#x20;we&#x20;report&#x20;the&#x20;low-temperature&#x20;(&lt;=&#x20;50&#x20;degrees&#x20;C)&#x20;synthesis&#x20;of&#x20;uniform&#x20;and&#x20;continuous&#x20;n-type&#x20;SnS2&#x20;thin&#x20;films&#x20;via&#x20;the&#x20;combination&#x20;of&#x20;atomic&#x20;layer&#x20;deposition&#x20;(ALD)&#x20;of&#x20;tin&#x20;oxides&#x20;and&#x20;subsequent&#x20;sulfurization.&#x20;Well-crystallized&#x20;and&#x20;aligned&#x20;SnS2&#x20;layers&#x20;parallel&#x20;to&#x20;the&#x20;substrate&#x20;are&#x20;demonstrated&#x20;through&#x20;the&#x20;phase&#x20;engineering&#x20;of&#x20;the&#x20;ALD-grown&#x20;tin&#x20;oxide&#x20;and&#x20;the&#x20;substrate&#x20;surface.&#x20;The&#x20;additional&#x20;H2S&#x20;plasma&#x20;treatment&#x20;at&#x20;300&#x20;degrees&#x20;C&#x20;leads&#x20;to&#x20;the&#x20;formation&#x20;of&#x20;stoichiometric&#x20;SnS2.&#x20;The&#x20;formation&#x20;of&#x20;conformal&#x20;SnS2&#x20;layers&#x20;over&#x20;a&#x20;three-dimensional&#x20;undulating&#x20;hole&#x20;structure&#x20;is&#x20;confirmed,&#x20;which&#x20;reveals&#x20;the&#x20;potential&#x20;for&#x20;applications&#x20;beyond&#x20;the&#x20;planar&#x20;structured&#x20;architecture.&#x20;The&#x20;present&#x20;results&#x20;could&#x20;be&#x20;a&#x20;step&#x20;toward&#x20;the&#x20;realization&#x20;of&#x20;2D&#x20;metal&#x20;dichalcogenides&#x20;in&#x20;industry.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ROYAL&#x20;SOC&#x20;CHEMISTRY</dcvalue>
<dcvalue element="subject" qualifier="none">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="none">ATOMIC&#x20;LAYER&#x20;DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="none">FIELD-EFFECT&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="none">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="none">ELECTRONIC-STRUCTURE</dcvalue>
<dcvalue element="subject" qualifier="none">MOS2&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="none">MONOLAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="none">GROWTH</dcvalue>
<dcvalue element="subject" qualifier="none">CRYSTALS</dcvalue>
<dcvalue element="subject" qualifier="none">OXIDES</dcvalue>
<dcvalue element="title" qualifier="none">Low-temperature&#x20;wafer-scale&#x20;synthesis&#x20;of&#x20;two-dimensional&#x20;SnS2</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1039&#x2F;c8nr05450a</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">NANOSCALE,&#x20;v.10,&#x20;no.37,&#x20;pp.17712&#x20;-&#x20;17721</dcvalue>
<dcvalue element="citation" qualifier="title">NANOSCALE</dcvalue>
<dcvalue element="citation" qualifier="volume">10</dcvalue>
<dcvalue element="citation" qualifier="number">37</dcvalue>
<dcvalue element="citation" qualifier="startPage">17712</dcvalue>
<dcvalue element="citation" qualifier="endPage">17721</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000450934400030</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85054268273</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Chemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ATOMIC&#x20;LAYER&#x20;DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FIELD-EFFECT&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">THIN-FILMS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ELECTRONIC-STRUCTURE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MOS2&#x20;TRANSISTORS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MONOLAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">GROWTH</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">CRYSTALS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OXIDES</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">SnS2</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">thin&#x20;film&#x20;transistor</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">atomic&#x20;layer&#x20;deposition</dcvalue>
</dublin_core>
