Shin, Y. H. Kim, Yongmin Song, J. D. 2024-01-19T21:33:54Z 2024-01-19T21:33:54Z 2021-09-05 2018-10 0022-2313 https://pubs.kist.re.kr/handle/201004/120844 The temperature dependence of the linearly polarized photoluminescence (PL) of an InP-GaP lateral nanowire (LNW) structure grown by a lateral composition modulation technique was measured. Two prominent PL peaks were observed at 5 K from each cross-polarization direction (the P//[110] and P//[1 1 0] crystal directions). By varying the excitation laser power, the higher-and lower-energy peaks were identified as the transitions from the InGaP bulk layers and from the nanowire structure, respectively. The transitions from the InGaP bulk exhibit a free-to-bound exciton transition below 60 K. For the nanowire transitions, the polarization directions parallel to the [110] and [110] directions are recognized as recombination from the InP conduction band to the InP (type I) and GaP (type II) valence band, respectively. The temperature dependent polarization degree and the integrated PL intensity of the bulk InGaP transition show thermal equilibrium behavior, whereas the type I LNW PL transition shows kinetic carrier transfer behavior below similar to 50 K. We also confirm that the temperature dependent polarization degree for the LNW transition supports the kinetic carrier transfer. English ELSEVIER SHORT-PERIOD SUPERLATTICES MOLECULAR-BEAM EPITAXY HIGH MAGNETIC-FIELDS QUANTUM-WIRES PHOTOLUMINESCENCE TEMPERATURE DEPENDENCE MODULATION SHIFTS Optically detected kinetic carrier transfer in InP-GaP lateral nanowires Article 10.1016/j.jlumin.2018.05.048 1 JOURNAL OF LUMINESCENCE, v.202, pp.107 - 110 JOURNAL OF LUMINESCENCE 202 107 110 scie scopus 000437005000016 2-s2.0-85047608024 Optics Optics Article SHORT-PERIOD SUPERLATTICES MOLECULAR-BEAM EPITAXY HIGH MAGNETIC-FIELDS QUANTUM-WIRES PHOTOLUMINESCENCE TEMPERATURE DEPENDENCE MODULATION SHIFTS Lateral composition modulation InP-GaP lateral nanowire Photoluminescence Carrier transfer