Yeo, Sunmog Han, Jiyoon Bae, Sukang Lee, Dong Su 2024-01-19T22:00:19Z 2024-01-19T22:00:19Z 2021-09-03 2018-09-18 2045-2322 https://pubs.kist.re.kr/handle/201004/120906 The defect evolution in graphene produced by ion beam bombardment is investigated by changing the ion species, irradiation energy and dose. Raman spectroscopy is performed to examine the defect yield produced under various ion beam bombardment conditions. The defect yields of the vacancy-type defect are well described by the linear energy transfer (L) and dose (d). By increasing Ld, the defect yields exhibit similar behaviours for all ion species. As a consequence, all the defect yields can be collapsed into a single curve by multiplying them by a single parameter, suggesting that the defect evolution under various ion beam bombardment conditions can be described in a simple formula. English NATURE PUBLISHING GROUP ELECTRICAL-PROPERTIES ELECTRONIC TRANSPORT RAMAN Coherence in defect evolution data for the ion beam irradiated graphene Article 10.1038/s41598-018-32300-w 1 SCIENTIFIC REPORTS, v.8 SCIENTIFIC REPORTS 8 scie scopus 000444801300016 2-s2.0-85053438447 Multidisciplinary Sciences Science & Technology - Other Topics Article ELECTRICAL-PROPERTIES ELECTRONIC TRANSPORT RAMAN graphene defect ion beam irradiation Raman spectroscopy linear energy transfer