Singh, Jitendra Pal Lim, Weon Cheol Lee, Ik-Jae Won, Sung Ok Chae, Keun Hwa 2024-01-19T22:01:21Z 2024-01-19T22:01:21Z 2021-09-03 2018-09 1947-2935 https://pubs.kist.re.kr/handle/201004/120958 In the present work, surface structure of MgO thin film deposited using radio frequency sputtering are discussed. These films were deposited for sputtering durations of 324 and 400 min while maintaining substrate temperature at 300 K and sputtering power at 40 W. The deposited films were further annealed at 300, 500 and 800 degrees C in order to see the effect of annealing on the surface structure. X-ray reflectivity measurements exhibit the improvement of density as well as the modification of surface of MgO thin films with increase of annealing temperature. Nearedge X-ray absorption fine structure measurements reveal that Mg2+ ion coordination is able to sustain high temperature of 800 degrees C without any deformation. Moreover, surface oxygen which adsorb during deposition moves away with the increase of annealing temperature. English AMER SCIENTIFIC PUBLISHERS MULTILAYER EPITAXY GROWTH Surface Structure of MgO Thin Films Revealed from X-ray Reflectivity and Near-Edge X-ray Absorption Fine Structure Measurements Article 10.1166/sam.2018.3316 1 SCIENCE OF ADVANCED MATERIALS, v.10, no.9, pp.1372 - 1376 SCIENCE OF ADVANCED MATERIALS 10 9 1372 1376 scie 000445007900022 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article MULTILAYER EPITAXY GROWTH MgO Thin Film X-ray Reflectivity Near-Edge X-ray Absorption Fine Structure