Alsalman, Hussain Hwang, Jeonghyun Kim, Moonkyung Campbell, Dorr Kwak, Joon Young Calderon, Brian Ji, Yanxin Gorantla, Sandeep Bachmatiuk, Alicja Ruemmeli, Mark H. Spencer, Michael G. 2024-01-19T22:01:25Z 2024-01-19T22:01:25Z 2021-09-03 2018-09 2399-1984 https://pubs.kist.re.kr/handle/201004/120961 The dry transfer of AB stacked bilayer high quality SiC epitaxial graphene is presented. Monolayers were also transferred for comparison. Large continuous layers exceeding hundreds of microns were successfully transferred. Structural characterization, using Raman and TEM methods, are used to assess the uniformity and the quality of the transferred layers, in which case they are found to be of high quality and tight uniformity. The bilayer structural characterization methods indicate AB stacking with good uniformity and stacking order over large areas. Electrical characterization is used to extract mobility performance figures and other electrical characteristics for the transferred layers in which the bilayers distinctively show electrical characteristics akin to AB stacking in contrast to the transferred monolayers using the same methods. Contact resistance values as well as transfer length ratios are measured using TLM method and reported for bilayers. Finally, annealing studies show mobility enhancement for bilayers as well as potential application in gas sensing. English IOP PUBLISHING LTD RAPID SYNTHESIS HIGH-QUALITY GROWTH LAYER PERFORMANCE TRANSISTORS BANDGAP OXYGEN GAS Synthesis of large area AB stacked bilayer graphene by SiC epitaxy and transfer Article 10.1088/2399-1984/aac9d9 1 NANO FUTURES, v.2, no.3 NANO FUTURES 2 3 scopus 000458245600001 2-s2.0-85063412977 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article RAPID SYNTHESIS HIGH-QUALITY GROWTH LAYER PERFORMANCE TRANSISTORS BANDGAP OXYGEN GAS graphene epitaxy SiC transfer FET bilayer AB Stack TLM