<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Jhon,&#x20;Young&#x20;In</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Jinho</dcvalue>
<dcvalue element="contributor" qualifier="author">Jhon,&#x20;Young&#x20;Min</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Ju&#x20;Han</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T22:01:49Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T22:01:49Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-03</dcvalue>
<dcvalue element="date" qualifier="issued">2018-09</dcvalue>
<dcvalue element="identifier" qualifier="issn">1077-260X</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;120983</dcvalue>
<dcvalue element="description" qualifier="abstract">We&#x20;performed&#x20;density&#x20;functional&#x20;theory&#x20;calculations&#x20;for&#x20;the&#x20;topological&#x20;insulators&#x20;(TIs)&#x20;of&#x20;Bi2Se3&#x20;and&#x20;CoSb3&#x20;(skut-terudite)&#x20;in&#x20;a&#x20;comparison&#x20;with&#x20;Bi2Te3&#x20;and&#x20;In2Co4Sb12&#x20;(filled&#x20;skutterudite)&#x20;to&#x20;explore&#x20;whether&#x20;the&#x20;former&#x20;TIs&#x20;can&#x20;serve&#x20;as&#x20;saturable-absorption&#x20;materials&#x20;for&#x20;laser&#x20;mode-locking&#x20;at&#x20;the&#x20;wavelengths&#x20;of&#x20;2&#x20;mu&#x20;m&#x20;and&#x20;beyond.&#x20;The&#x20;calculated&#x20;electronic-band&#x20;structures&#x20;and&#x20;optical-absorption&#x20;spectra&#x20;indicate&#x20;the&#x20;potential&#x20;of&#x20;these&#x20;TIs&#x20;in&#x20;terms&#x20;of&#x20;midinfrared&#x20;saturable-absorption&#x20;applications.&#x20;Especially,&#x20;in&#x20;consideration&#x20;of&#x20;the&#x20;film&#x20;and&#x20;bulk&#x20;forms&#x20;of&#x20;Bi2Se3&#x20;and&#x20;Bi2Te3,&#x20;we&#x20;investigated&#x20;the&#x20;electronic&#x20;and&#x2F;or&#x20;optical&#x20;properties&#x20;of&#x20;the&#x20;metallic&#x20;surface&#x20;states&#x20;and&#x20;the&#x20;semiconducting&#x20;interior&#x20;states,&#x20;respectively.&#x20;They&#x20;exhibited&#x20;an&#x20;excellent&#x20;broadband&#x20;operability&#x20;regardless&#x20;of&#x20;the&#x20;state,&#x20;and&#x20;particularly,&#x20;we&#x20;noted&#x20;a&#x20;linearly&#x20;dispersive&#x20;relation&#x20;around&#x20;the&#x20;Fermi&#x20;levels&#x20;of&#x20;all&#x20;of&#x20;the&#x20;electrons&#x20;of&#x20;the&#x20;Bi2Se3&#x20;surface&#x20;in&#x20;both&#x20;the&#x20;conduction&#x20;and&#x20;valence&#x20;bands,&#x20;whereas&#x20;this&#x20;is&#x20;not&#x20;evident&#x20;for&#x20;Bi2Te3.&#x20;Assuming&#x20;the&#x20;importance&#x20;of&#x20;linear&#x20;dispersion&#x20;for&#x20;a&#x20;fast&#x20;electronic&#x20;relaxation,&#x20;and&#x20;considering&#x20;the&#x20;decent&#x20;oxidation&#x20;resistance&#x20;of&#x20;the&#x20;Bi2Se3&#x20;surface,&#x20;we&#x20;suggest&#x20;that&#x20;Bi2Se3&#x20;is&#x20;superior&#x20;to&#x20;Bi2Te3&#x20;for&#x20;midinfrared&#x20;mode-locking.&#x20;A&#x20;review&#x20;of&#x20;the&#x20;experimental&#x20;studies&#x20;regarding&#x20;TI-based&#x20;2-mu&#x20;m&#x20;saturable&#x20;absorbers&#x20;that&#x20;have&#x20;been&#x20;performed&#x20;so&#x20;far&#x20;is&#x20;presented,&#x20;and&#x20;the&#x20;discussion&#x20;and&#x20;rationalization&#x20;of&#x20;the&#x20;possible&#x20;universality&#x20;of&#x20;TIs&#x20;regarding&#x20;mid-to&#x20;far-infrared&#x20;passive&#x20;mode&#x20;lockers&#x20;results&#x20;in&#x20;the&#x20;suggestion&#x20;of&#x20;a&#x20;new&#x20;CoSb3-TI-based&#x20;saturable&#x20;absorber.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">IEEE-INST&#x20;ELECTRICAL&#x20;ELECTRONICS&#x20;ENGINEERS&#x20;INC</dcvalue>
<dcvalue element="subject" qualifier="none">MU-M</dcvalue>
<dcvalue element="subject" qualifier="none">BI2TE3</dcvalue>
<dcvalue element="subject" qualifier="none">BI2SE3</dcvalue>
<dcvalue element="subject" qualifier="none">SURFACE</dcvalue>
<dcvalue element="subject" qualifier="none">STATE</dcvalue>
<dcvalue element="subject" qualifier="none">EXFOLIATION</dcvalue>
<dcvalue element="subject" qualifier="none">NANOSHEETS</dcvalue>
<dcvalue element="subject" qualifier="none">OXIDATION</dcvalue>
<dcvalue element="title" qualifier="none">Topological&#x20;Insulators&#x20;for&#x20;Mode-Locking&#x20;of&#x20;2-mu&#x20;m&#x20;Fiber&#x20;Lasers</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1109&#x2F;JSTQE.2018.2811903</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">IEEE&#x20;JOURNAL&#x20;OF&#x20;SELECTED&#x20;TOPICS&#x20;IN&#x20;QUANTUM&#x20;ELECTRONICS,&#x20;v.24,&#x20;no.5</dcvalue>
<dcvalue element="citation" qualifier="title">IEEE&#x20;JOURNAL&#x20;OF&#x20;SELECTED&#x20;TOPICS&#x20;IN&#x20;QUANTUM&#x20;ELECTRONICS</dcvalue>
<dcvalue element="citation" qualifier="volume">24</dcvalue>
<dcvalue element="citation" qualifier="number">5</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000429972600001</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85043471920</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Electrical&#x20;&amp;&#x20;Electronic</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Quantum&#x20;Science&#x20;&amp;&#x20;Technology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Optics</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Optics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MU-M</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BI2TE3</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BI2SE3</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SURFACE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">STATE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">EXFOLIATION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOSHEETS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">OXIDATION</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Topological&#x20;insulators</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">saturable&#x20;absorbers</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">mode-locking</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">fiber&#x20;lasers</dcvalue>
</dublin_core>
