Kumar, Manish Singh, Jitendra Pal Chae, Keun Hwa Kim, Jong Hyun Lee, Hyun Hwi 2024-01-19T22:02:21Z 2024-01-19T22:02:21Z 2021-09-03 2018-08-30 0925-8388 https://pubs.kist.re.kr/handle/201004/121012 Ti doped ZnO (TZO) thin films are stabilized by means of sputtering on quartz substrates and their structural, optical and electronic structure studies are carried out. The effect of different substrate temperature during growth and post deposition annealing effect is emphasized in TZO films. Structural characterization reveals that the TZO films have a wurzite phase with (0001) preferred orientation and lattice strain tends to relax at higher growth temperature and lower growth rate. Crystallite size, lattice strain and the band gap demonstrate dependency on deposition parameters. Moreover, these are strongly influenced by post deposition annealing treatment. The changes induced in the electronic structure of TZO films due to varying deposition parameters and post annealing treatment are understood through X-ray absorption spectroscopy and X-ray absorption near-edge structure measurements. The secondary ion mass spectrometry predicts that concentration of Ti in TZO film is laterally homogeneous but is vertically modulated upon post annealing while the Zn and have followed stable concentration profile. (C) 2018 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TI SPECTROSCOPY COORDINATION VALENCE XANES BAND Structure, optical and electronic structure studies of Ti:ZnO thin films Article 10.1016/j.jallcom.2018.04.338 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.759, pp.8 - 13 JOURNAL OF ALLOYS AND COMPOUNDS 759 8 13 scie scopus 000434117600002 2-s2.0-85047083704 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article TI SPECTROSCOPY COORDINATION VALENCE XANES BAND Ti doped ZnO Thin film Sputtering UV-Visible XAS