Lee, Jinhyung Kim, Jong Cheol Kim, Jongsik Singh, Rajiv K. Arjunan, Arul C. Lee, Haigun 2024-01-19T22:02:23Z 2024-01-19T22:02:23Z 2021-09-03 2018-08-30 0040-6090 https://pubs.kist.re.kr/handle/201004/121014 The extent of subsurface damage on (0001) GaN wafers post different polishing treatments was quantified using depth-resolved cathodoluminescence spectroscopy (DRCLS). The band edge emission spectra were obtained from CLS with different electron energies, which manifested a significant non-radiative recombination resulted from polishing-induced subsurface damage. Cross-sectional transmission electron microscopy (XTEM) was also used to diagnose the extent of the subsurface damage layer. For the GaN polished with 1.00 and 0.25 mu m diamonds abrasive, the extent of non-radiative subsurface damage is about 250 and 100 nm, corresponding to the calculated electron penetration depth at the accelerating voltage for the onset of band edge emission. In this study, the depth of subsurface damage estimated from CL spectra compared well with direct XTEM measurements in GaN substrate. English ELSEVIER SCIENCE SA GALLIUM NITRIDE RECOMBINATION DISLOCATIONS Evaluation of subsurface damage inherent to polished GaN substrates using depth-resolved cathodoluminescence spectroscopy Article 10.1016/j.tsf.2018.07.002 1 THIN SOLID FILMS, v.660, pp.516 - 520 THIN SOLID FILMS 660 516 520 scie scopus 000441177500069 2-s2.0-85049465602 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article GALLIUM NITRIDE RECOMBINATION DISLOCATIONS Subsurface damage Chemical mechanical polishing Non-radiative recombination Cathodoluminescence spectroscopy Gallium nitride