Jang, Joohee Yim, Haena Choi, Ji-won 2024-01-19T22:02:24Z 2024-01-19T22:02:24Z 2021-09-03 2018-08-30 0040-6090 https://pubs.kist.re.kr/handle/201004/121015 Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated on flexible substrates at room temperature for indium free transparent conducting electrode. The optimal composition of Si-doped SnO2 was found by investigating electrical properties of various composition deposited by off-axis RF magnetron sputtering continuous composition spread method. Si-doped SnO2 thin films have low resistivity (0.07 Omega.cm) at doping content of Si (0.14 wt%). Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin films were fabricated using optimized composition deposited by on-axis RF and DC sputtering. The optimized Si-doped SnO2/Ag/Si-doped SnO2 multilayer thin film has resistivity of 9.1x10(-5) Omega.cm and 81% transmittance in the visible region (550 nm). English ELSEVIER SCIENCE SA THIN-FILMS OPTICAL-PROPERTIES TRANSPARENT TIN SURFACES Exploration of Si-doped SnO2 composition and properties of oxide/Ag/oxide multilayers prepared using continuous composition spread by sputtering Article 10.1016/j.tsf.2018.05.010 1 THIN SOLID FILMS, v.660, pp.606 - 612 THIN SOLID FILMS 660 606 612 scie scopus 000441177500082 2-s2.0-85046720886 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper THIN-FILMS OPTICAL-PROPERTIES TRANSPARENT TIN SURFACES Transparent conducting oxides Si-doped SnO2/Ag/Si-doped SnO2 Thin films Electrical properties Optical properties Radio-frequency magnetron sputtering Continuous composition spread