Yeo, Inah Yi, Kyung Soo Lee, Eun Hye Song, Jin Dong Kim, Jong Su Han, Il Ki 2024-01-19T22:03:28Z 2024-01-19T22:03:28Z 2021-09-03 2018-08 2470-1343 https://pubs.kist.re.kr/handle/201004/121072 Here, we investigate the stoichiometry control of GaAs/Al0.3Ga0.7As droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown "strain-free" QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with well-controlled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects. English AMER CHEMICAL SOC PHOTON BAND Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry Article 10.1021/acsomega.8b01078 1 ACS OMEGA, v.3, no.8, pp.8677 - 8682 ACS OMEGA 3 8 8677 8682 scie scopus 000444182900003 2-s2.0-85051136630 Chemistry, Multidisciplinary Chemistry Article PHOTON BAND recrystallization quantum dots droplet epitaxy near-unity stoichiometry