Sato, Shin-ichiro Honda, Tomoya Makino, Takahiro Hijikata, Yasuto Lee, Sang-Yun Ohshima, Takeshi 2024-01-19T22:03:39Z 2024-01-19T22:03:39Z 2021-09-03 2018-08 2330-4022 https://pubs.kist.re.kr/handle/201004/121082 Single photon source (SPS) providing nonclassical light states on demand is one of the key technologies for the application of quantum communication and optical quantum computer. In this paper, room temperature electrical control of single photon emission from defects at 4H-SiC surface is presented. Planar-type 4H-SiC p(+)nn(+) diodes are fabricated and defects that act as SPS are formed on the surface of n-type epi-layer by field oxidation process. The photon emission properties of SPSs are investigated using a home-built confocal microscopy. Results show that the electroluminescence (EL) intensity of SPS can be controlled by minority carrier injection of forward bias voltages, while the photoluminescence (PL) intensity of SPS can be controlled by reverse bias voltages. No significant variations due to applied bias voltages are observed in the EL and PL spectra, indicating the defect structure and charge state are unchanged. The PL intensity modulation by switching a reverse bias voltage is also demonstrated. English AMER CHEMICAL SOC SILICON-CARBIDE QUANTUM-WELL SPINS FIELD PHOTOLUMINESCENCE SEMICONDUCTOR GENERATION GROWTH Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface Article 10.1021/acsphotonics.8b00375 1 ACS PHOTONICS, v.5, no.8, pp.3159 - 3165 ACS PHOTONICS 5 8 3159 3165 scie scopus 000442185900025 2-s2.0-85047601078 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Optics Physics, Applied Physics, Condensed Matter Science & Technology - Other Topics Materials Science Optics Physics Article SILICON-CARBIDE QUANTUM-WELL SPINS FIELD PHOTOLUMINESCENCE SEMICONDUCTOR GENERATION GROWTH silicon carbide optically active defects single photon source defect engineering photon emission modulation