Park, Young Ran Choi, Won Kook Hong, Young Joon 2024-01-19T22:30:28Z 2024-01-19T22:30:28Z 2022-01-25 2018-07 0003-6951 https://pubs.kist.re.kr/handle/201004/121166 This study demonstrates superior electrical and electroluminescence performance of inverted quantum-dot light-emitting diodes (QD-LEDs) with a V2O5/poly(N-vinylcarbazole) (PVK) hole conduction layer. Hole- and electron-only device measurements reveal a more balanced charge carrier injection as well as the higher hole conduction capability in the inverted QD-LED than the standard one. Smooth stepwise hole conduction energy levels with a remarkably reduced hole barrier height (Delta h) from 1.74 to 0.89 eV at QD/PVK are found to be responsible for high hole conduction and high luminous efficiency in the inverted QD-LED, which is validated by ultraviolet photoelectron spectroscopy measurements. The down-shifted electronic energy levels of PVK for reducing the Delta h are discussed from the point of view of molecular orientation of PVK governed by interfacial atomic interaction with underlayers of V2O5 and QD for standard and inverted device structures, respectively. Published by AIP Publishing. English AMER INST PHYSICS Hole barrier height reduction in inverted quantum-dot light-emitting diodes with vanadium(V) oxide/poly N-vinylcarbazole hole transport layer Article 10.1063/1.5040099 1 APPLIED PHYSICS LETTERS, v.113, no.4 APPLIED PHYSICS LETTERS 113 4 N scie scopus 000440046600031 2-s2.0-85050779571 Physics, Applied Physics Article INDIUM-TIN-OXIDE ELECTRONIC-STRUCTURE INJECTION LAYER METAL-OXIDE EFFICIENT FILM POLYMER