Kim, Jong Su Han, Im Sik Lee, Sang Jun Song, Jin Dong 2024-01-19T22:30:49Z 2024-01-19T22:30:49Z 2021-09-03 2018-07 0374-4884 https://pubs.kist.re.kr/handle/201004/121185 During the Ga-molecules suppling on to the lattice-matched AlGaAs surface, we discussed the Ga-droplet formation dynamics based on Ga migration and diffusion behavior on GaAs (100), (111)A and (111)B surfaces. We discussed the formation mechanism of GaAs quantum dots (QDs), quantum dot molecules (QDMs; coupled QDs), single quantum rings (QRs), and double quantum rings (d-QRs; coupled QRs) complexes. Since the shape of GaAs quantum nanostructures (QNs) on (100) surface is affected by the out-migration of Ga-molecules due to the specific surface As coverage condition during crystallization, we can also control the shape of QNs by varying the conditions of droplet epitaxy process. In addition, by using the nature of the Ga-migration on the (111)A and (111)B surfaces, we fabricated ultra-high density (1.6 x 10(11) /cm(2)) GaAs QDs and ultra-low density (6.5 x 10(5) /cm(2)) GaAs QNs on the AlGaAs (111)A and (111)B surfaces surface, respectively. English KOREAN PHYSICAL SOC MOLECULAR-BEAM EPITAXY ENERGY ELECTRON-DIFFRACTION SCANNING-TUNNELING-MICROSCOPY SURFACE-DIFFUSION LENGTH DOT CELLULAR-AUTOMATA SINGLE-PHOTON SOURCES OPTICAL-PROPERTIES TEMPERATURE-DEPENDENCE INAS NANOCRYSTALS FACET STRUCTURES Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems Article 10.3938/jkps.73.190 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.73, no.2, pp.190 - 202 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 73 2 190 202 scie scopus kci ART002369792 000440159200005 2-s2.0-85051069693 Physics, Multidisciplinary Physics Review MOLECULAR-BEAM EPITAXY ENERGY ELECTRON-DIFFRACTION SCANNING-TUNNELING-MICROSCOPY SURFACE-DIFFUSION LENGTH DOT CELLULAR-AUTOMATA SINGLE-PHOTON SOURCES OPTICAL-PROPERTIES TEMPERATURE-DEPENDENCE INAS NANOCRYSTALS FACET STRUCTURES GaAs Droplet epitaxy Quantum nanostructures