Jang, Sukjae Son, Dabin Hwang, Sunbin Kang, Minji Lee, Seoung-Ki Jeon, Dae-Young Bae, Sukang Lee, Sang Hyun Lee, Dong Su Kim, Tae-Wook 2024-01-19T22:31:05Z 2024-01-19T22:31:05Z 2021-09-03 2018-07 2196-5404 https://pubs.kist.re.kr/handle/201004/121200 Low voltage operational organic transistors (< 4 V) based on pentacene were successfully fabricated with hybrid dielectric films composed of aluminum oxide using atomic layer deposition and various phosphonic acid-based self-assembled monolayers as the gate dielectrics. High capacitances up to 279 nF/cm(2), low leakage current densities of 10(-8) A/cm(2) at 6 V, and high breakdown fields up to 7.5 MV/cm were obtained. The transistors with the octade-cylphosphonic acid hybrid dielectric exhibited an improved saturation mobility of 0.58 cm(2)/Vs, a subthreshold slope of 151 mV/decade, a threshold voltage of -1.84 V and an on-off current ratio of 10(6). The low surface energies of the self-assembled monolayers having non-polar terminal groups, such as methyl and pentafluorophenoxy, improved the carrier conduction of the transistors due to the pentacene growth with an edge-on orientation for low voltage operation. The pentafluorophenoxy end-group showed an accumulation of holes at the semiconductor-dielectric interface. English Springer | Korea Nano Technology Research Society Hybrid dielectrics composed of Al2O3 and phosphonic acid self-assembled monolayers for performance improvement in low voltage organic field effect transistors Article 10.1186/s40580-018-0152-3 1 Nano Convergence, v.5 Nano Convergence 5 Y scie scopus 000451705400001 2-s2.0-85065019219 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article ATOMIC-LAYER-DEPOSITION THIN-FILM TRANSISTORS GATE DIELECTRICS LOW-TEMPERATURE DENSITY Hybrid dielectrics ALD Al2O3 PA-SAM Phosphonic acid Water contact angle Organic transistor