Jeon, Dae-Young Lee, Dong Su Lee, Seoung-Ki Park, Min Park, So Jeong Kim, Gyu-Tae 2024-01-19T22:31:19Z 2024-01-19T22:31:19Z 2021-09-03 2018-07 0018-9383 https://pubs.kist.re.kr/handle/201004/121212 Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors Article 10.1109/TED.2018.2836345 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053 IEEE TRANSACTIONS ON ELECTRON DEVICES 65 7 3050 3053 scie scopus 000435546700054 2-s2.0-85047643588 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article 2-D transition-metal dichalcogenides (TMDs) bulk channel mobility maximum depletion width partially depleted (PD) series resistance