Pak, Jinsu Jang, Yeonsik Byun, Junghwan Cho, Kyungjune Kim, Tae-Young Kim, Jae-Keun Choi, Barbara Yuri Shin, Jiwon Hong, Yongtaek Chung, Seungjun Lee, Takhee 2024-01-19T22:31:21Z 2024-01-19T22:31:21Z 2021-09-03 2018-07 1936-0851 https://pubs.kist.re.kr/handle/201004/121214 As two-dimensional (2D) transition metal dichalcogenides electronic devices are scaled down to the sub micrometer regime, the active layers of these materials are exposed to high lateral electric fields, resulting in electrical breakdown. In this regard, understanding the intrinsic nature in To layer-stacked 2D semiconducting materials under high lateral electric fields is necessary for the reliable applications of their field-effect transistors. Here, we explore the electrical breakdown phenomena originating from avalanche multiplication in MoS2 field-effect transistors with different layer thicknesses and channel lengths. Modulating the band structure and bandgap energy in MoS2 allows the avalanche multiplication to be controlled by adjusting the number of stacking layers. This phenomenon could be observed in transition metal dichalcogenide semiconducting systems due to its quantum confinement effect on the band structure. The relationship between the critical electric field for avalanche breakdown and bandgap energy is well fitted to a power law curve in both monolayer and multilayer MoS2. English AMER CHEMICAL SOC BANDGAP SEMICONDUCTORS IMPACT IONIZATION MULTIPLICATION ELECTRONICS GRAPHENE WIDE BULK Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields Article 10.1021/acsnano.8b02925 1 ACS NANO, v.12, no.7, pp.7109 - 7116 ACS NANO 12 7 7109 7116 scie scopus 000440505000075 2-s2.0-85049339570 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article BANDGAP SEMICONDUCTORS IMPACT IONIZATION MULTIPLICATION ELECTRONICS GRAPHENE WIDE BULK MoS2 avalanche multiplication 2D materials field-effect transistors electrical breakdown