Lee, Song-ee Yeo, Inah Jo, Min Kyung Jeong, Young Woo Kim, Tae Geun Kim, Jong Su Yi, Kyung Soo Han, Il Ki Song, Jin Dong 2024-01-19T22:31:23Z 2024-01-19T22:31:23Z 2021-09-03 2018-07 1567-1739 https://pubs.kist.re.kr/handle/201004/121216 We examine the temperature-dependent excitonic transition energy shift of strain-free GaAs droplet epitaxy ( DE) quantum dots (QDs). Interestingly the statistical investigation of QD optical properties enables us to observe three distinct temperature dispersions for four series of DE QDs. We present comparative analyses of the excitonphonon coupling mechanisms employing various empirical to multi-oscillator models associated with each QD-specific phonon dispersion spectrum. The systematic investigation of such QD exciton-phonon coupling is crucial for fine control of local defects in engineered quantum dot single-photon sources. English ELSEVIER SCIENCE BV GROUP-III-V TEMPERATURE-DEPENDENCE ENERGY-GAP PHOTOLUMINESCENCE WELL Exciton-phonon coupling channels in a 'strain-free' GaAs droplet epitaxy single quantum dot Article 10.1016/j.cap.2018.04.003 1 CURRENT APPLIED PHYSICS, v.18, no.7, pp.829 - 833 CURRENT APPLIED PHYSICS 18 7 829 833 scie scopus kci ART002369832 000430915800008 2-s2.0-85045254049 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article GROUP-III-V TEMPERATURE-DEPENDENCE ENERGY-GAP PHOTOLUMINESCENCE WELL Engineered quantum dot single-photon source Strain-free quantum dot Droplet epitaxy Exciton-phonon coupling