Kim, Byung Jun Park, Sungho Cha, Soon Kyu Han, Il Ki Kang, Seong Jun 2024-01-19T22:31:33Z 2024-01-19T22:31:33Z 2021-09-03 2018-07 2046-2069 https://pubs.kist.re.kr/handle/201004/121225 Near-infrared (NIR) photoswitching transistors have been fabricated using a hybrid structure of zinc oxide (ZnO) and quantum-dots (QDs). The ZnO active layer was prepared using a solution process, while colloidal QDs were inserted between a silicon dioxide (SiO2) gate insulator and a ZnO active layer. The small band gap QDs (1.59 eV) were used to absorb low-energy NIR photons, generate photo-excited carriers, and inject them into the conduction band of the ZnO film. The device with the interfacial QDs induced photocurrents upon exposure to 780 nm-wavelength light. The photoresponsivity of the ZnO/QD device was 0.06 mA W-1, while that of the device without QDs was 1.7 x 10(-5) mA W-1, which indicated that the small band gap QDs enabled a photo-induced current when exposed to NIR light. Furthermore, a photoinverter was prepared which was composed of a ZnO/QDs phototransistor and a load resistor. Photoswitching characteristics indicated that the photoinverter was well modulated by a periodic light signal of 780 nm in wavelength. The results demonstrate a useful way to fabricate NIR optoelectronics based on ZnO and QDs. English ROYAL SOC CHEMISTRY THIN-FILM TRANSISTORS OXIDE TRANSPARENT A near-infrared photoinverter based on ZnO and quantum-dots Article 10.1039/c8ra03588a 1 RSC ADVANCES, v.8, no.41, pp.23421 - 23425 RSC ADVANCES 8 41 23421 23425 scie scopus 000437189400059 2-s2.0-85049364615 Chemistry, Multidisciplinary Chemistry Article THIN-FILM TRANSISTORS OXIDE TRANSPARENT photoinverter near-infrared ZnOquantum dots