Kim, Jong Cheol Kim, Jongsik Xin, Yan Lee, Jinhyung Kim, Young-Gyun Subhash, Ghatu Singh, Rajiv K. Arjunan, Arul C. Lee, Haigun 2024-01-19T22:34:19Z 2024-01-19T22:34:19Z 2021-09-03 2018-05-21 0003-6951 https://pubs.kist.re.kr/handle/201004/121366 The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (similar to 3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry. Published by AIP Publishing. English AMER INST PHYSICS ON-DIAMOND DEVICES CARBON TECHNOLOGY GALLIUM WAFERS IMPACT GAN SPS Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion Article 10.1063/1.5030580 1 APPLIED PHYSICS LETTERS, v.112, no.21 APPLIED PHYSICS LETTERS 112 21 scie scopus 000433140900009 2-s2.0-85047532376 Physics, Applied Physics Article ON-DIAMOND DEVICES CARBON TECHNOLOGY GALLIUM WAFERS IMPACT GAN SPS